SSM6L16FETE85LF, Toshiba Semiconductor and Storage
Product Information
FET Feature:
Standard
Rds On (Max) @ Id, Vgs:
3 Ohm @ 10mA, 4V
Detailed Description:
Mosfet Array N and P-Channel 20V 100mA 150mW Surface Mount ES6 (1.6x1.6)
Input Capacitance (Ciss) (Max) @ Vds:
9.3pF @ 3V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.1V @ 0.1mA
Part Status:
Not For New Designs
Standard Package:
1
Package / Case:
SOT-563, SOT-666
Supplier Device Package:
ES6 (1.6x1.6)
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TA)
FET Type:
N and P-Channel
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power - Max:
150mW
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
100mA
Other Names:
SSM6L16FETE85LFCT
Manufacturer:
Toshiba Semiconductor and Storage
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6L16FETE85LF. The FET features of the product include standard. It has a maximum Rds On and voltage of 3 ohm @ 10ma, 4v. It features mosfet array n and p-channel 20v 100ma 150mw surface mount es6 (1.6x1.6). The product's input capacitance at maximum includes 9.3pf @ 3v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.1v @ 0.1ma. Furthermore, the product is not for new designs It is available in the standard package of 1. Moreover, the product comes in [Package/ Case]. es6 (1.6x1.6) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (ta) operating temperature range. It carries FET type n and p-channel. Its typical moisture sensitivity level is 1 (unlimited). The maximum power of the product is 150mw. The product has a 20v drain to source voltage. The continuous current drain at 25°C is 100ma. Alternative Names include ssm6l16fete85lfct. The toshiba semiconductor and storage's product offers user-desired applications.
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