SI3585DV-T1-GE3, Vishay Siliconix
Product Information
FET Feature:
Logic Level Gate
Detailed Description:
Mosfet Array N and P-Channel 20V 2A, 1.5A 830mW Surface Mount 6-TSOP
Vgs(th) (Max) @ Id:
600mV @ 250µA (Min)
Part Status:
Obsolete
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Current - Continuous Drain (Id) @ 25°C:
2A, 1.5A
Base Part Number:
SI3585
Gate Charge (Qg) (Max) @ Vgs:
3.2nC @ 4.5V
Rds On (Max) @ Id, Vgs:
125 mOhm @ 2.4A, 4.5V
FET Type:
N and P-Channel
Standard Package:
1
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
6-TSOP
Packaging:
Cut Tape (CT)
Power - Max:
830mW
Other Names:
SI3585DV-T1-GE3CT
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FAQs
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI3585DV-T1-GE3. The FET features of the product include logic level gate. It features mosfet array n and p-channel 20v 2a, 1.5a 830mw surface mount 6-tsop. The typical Vgs (th) (max) of the product is 600mv @ 250µa (min). Furthermore, the product is obsolete The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The continuous current drain at 25°C is 2a, 1.5a. Base Part Number: si3585. The maximum gate charge and given voltages include 3.2nc @ 4.5v. It has a maximum Rds On and voltage of 125 mohm @ 2.4a, 4.5v. It carries FET type n and p-channel. It is available in the standard package of 1. The vishay siliconix's product offers user-desired applications. The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 6-tsop is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 830mw. Alternative Names include si3585dv-t1-ge3ct.
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