This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6N7002BFE,LM. The FET features of the product include logic level gate. It has a maximum Rds On and voltage of 2.1 ohm @ 500ma, 10v. It features mosfet array 2 n-channel (dual) 60v 200ma 150mw surface mount es6. The product's input capacitance at maximum includes 17pf @ 25v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3.1v @ 250µa. Furthermore, the product is active It is available in the standard package of 1. Moreover, the product comes in [Package/ Case]. es6 is the supplier device package value. It has typical 16 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). Its typical moisture sensitivity level is 1 (unlimited). The maximum power of the product is 150mw. The product has a 60v drain to source voltage. The continuous current drain at 25°C is 200ma. Alternative Names include ssm6n7002bfelmct. The toshiba semiconductor and storage's product offers user-desired applications.
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6N7002BFE,LM. The FET features of the product include logic level gate. It has a maximum Rds On and voltage of 2.1 ohm @ 500ma, 10v. It features mosfet array 2 n-channel (dual) 60v 200ma 150mw surface mount es6. The product's input capacitance at maximum includes 17pf @ 25v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3.1v @ 250µa. Furthermore, the product is active It is available in the standard package of 1. Moreover, the product comes in [Package/ Case]. es6 is the supplier device package value. It has typical 16 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). Its typical moisture sensitivity level is 1 (unlimited). The maximum power of the product is 150mw. The product has a 60v drain to source voltage. The continuous current drain at 25°C is 200ma. Alternative Names include ssm6n7002bfelmct. The toshiba semiconductor and storage's product offers user-desired applications.
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