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SSM6N55NU,LF(T, Toshiba Semiconductor and Storage

SSM6N55NU-LF-T Toshiba Semiconductor and Storage SSM6N55NU,LF(T
Toshiba Semiconductor and Storage

Product Information

FET Feature:
Logic Level Gate
Rds On (Max) @ Id, Vgs:
46 mOhm @ 4A, 10V
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 30V 4A 1W Surface Mount 6-µDFN(2x2)
Input Capacitance (Ciss) (Max) @ Vds:
280pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
2.5nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 100µA
Part Status:
Discontinued at Digi-Key
Standard Package:
1
Package / Case:
6-WDFN Exposed Pad
Supplier Device Package:
6-µDFN(2x2)
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power - Max:
1W
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
4A
Other Names:
SSM6N55NULF(TCT SSM6N55NULFCT SSM6N55NULFCT-ND
Manufacturer:
Toshiba Semiconductor and Storage
RoHs Compliant
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6N55NU,LF(T. The FET features of the product include logic level gate. It has a maximum Rds On and voltage of 46 mohm @ 4a, 10v. It features mosfet array 2 n-channel (dual) 30v 4a 1w surface mount 6-µdfn(2x2). The product's input capacitance at maximum includes 280pf @ 15v. The maximum gate charge and given voltages include 2.5nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 100µa. Furthermore, the product is discontinued at digi-key It is available in the standard package of 1. Moreover, the product comes in [Package/ Case]. 6-µdfn(2x2) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). Its typical moisture sensitivity level is 1 (unlimited). The maximum power of the product is 1w. The product has a 30v drain to source voltage. The continuous current drain at 25°C is 4a. Alternative Names include ssm6n55nulf(tct ssm6n55nulfct ssm6n55nulfct-nd. The toshiba semiconductor and storage's product offers user-desired applications.

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