SSM6P35FE(TE85L,F), Toshiba Semiconductor and Storage
Product Information
FET Feature:
Logic Level Gate
Base Part Number:
SSM6P35
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 20V 100mA 150mW Surface Mount ES6 (1.6x1.6)
Input Capacitance (Ciss) (Max) @ Vds:
12.2pF @ 3V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 1mA
Part Status:
Discontinued at Digi-Key
Standard Package:
1
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
8 Ohm @ 50mA, 4V
Supplier Device Package:
ES6 (1.6x1.6)
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 P-Channel (Dual)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power - Max:
150mW
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
100mA
Other Names:
SSM6P35FE(TE85LF)CT
Manufacturer:
Toshiba Semiconductor and Storage
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6P35FE(TE85L,F). The FET features of the product include logic level gate. Base Part Number: ssm6p35. It features mosfet array 2 p-channel (dual) 20v 100ma 150mw surface mount es6 (1.6x1.6). The product's input capacitance at maximum includes 12.2pf @ 3v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 1ma. Furthermore, the product is discontinued at digi-key It is available in the standard package of 1. Moreover, the product comes in [Package/ Case]. It has a maximum Rds On and voltage of 8 ohm @ 50ma, 4v. es6 (1.6x1.6) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual). Its typical moisture sensitivity level is 1 (unlimited). The maximum power of the product is 150mw. The product has a 20v drain to source voltage. The continuous current drain at 25°C is 100ma. Alternative Names include ssm6p35fe(te85lf)ct. The toshiba semiconductor and storage's product offers user-desired applications.
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