NTGD4167CT1G, ON Semiconductor
Product Information
FET Feature:
Logic Level Gate
Base Part Number:
NTGD4167C
Detailed Description:
Mosfet Array N and P-Channel 30V 2.6A, 1.9A 900mW Surface Mount 6-TSOP
Input Capacitance (Ciss) (Max) @ Vds:
295pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
5.5nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Part Status:
Active
Drain to Source Voltage (Vdss):
30V
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
90mOhm @ 2.6A, 4.5V
Supplier Device Package:
6-TSOP
Manufacturer Standard Lead Time:
4 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Power - Max:
900mW
Current - Continuous Drain (Id) @ 25°C:
2.6A, 1.9A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTGD4167CT1G. The FET features of the product include logic level gate. Base Part Number: ntgd4167c. It features mosfet array n and p-channel 30v 2.6a, 1.9a 900mw surface mount 6-tsop. The product's input capacitance at maximum includes 295pf @ 15v. The maximum gate charge and given voltages include 5.5nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. Furthermore, the product is active The product has a 30v drain to source voltage. Moreover, the product comes in [Package/ Case]. It has a maximum Rds On and voltage of 90mohm @ 2.6a, 4.5v. 6-tsop is the supplier device package value. It has typical 4 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 900mw. The continuous current drain at 25°C is 2.6a, 1.9a. The on semiconductor's product offers user-desired applications.
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