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SSM3K15ACT(TPL3), Toshiba Semiconductor and Storage

SSM3K15ACT-TPL3- Toshiba Semiconductor and Storage SSM3K15ACT(TPL3)
Toshiba Semiconductor and Storage

Product Information

Detailed Description:
N-Channel 30V 100mA (Ta) 100mW (Ta) Surface Mount CST3
Vgs(th) (Max) @ Id:
1.5V @ 100µA
Part Status:
Discontinued at Digi-Key
Operating Temperature:
150°C (TJ)
Package / Case:
SC-101, SOT-883
Rds On (Max) @ Id, Vgs:
3.6 Ohm @ 10mA, 4V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
13.5pF @ 3V
Mounting Type:
Surface Mount
Series:
U-MOSIII
Supplier Device Package:
CST3
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
100mA (Ta)
Power Dissipation (Max):
100mW (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
SSM3K15ACT(TPL3)CT
RoHs Compliant
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3K15ACT(TPL3). It features n-channel 30v 100ma (ta) 100mw (ta) surface mount cst3. The typical Vgs (th) (max) of the product is 1.5v @ 100µa. Furthermore, the product is discontinued at digi-key The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. It has a maximum Rds On and voltage of 3.6 ohm @ 10ma, 4v. It carries FET type n-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 13.5pf @ 3v. The product is available in surface mount configuration. The product u-mosiii, is a highly preferred choice for users. cst3 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 100ma (ta). The product carries maximum power dissipation 100mw (ta). This product use mosfet (metal oxide) technology. Alternative Names include ssm3k15act(tpl3)ct.

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You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage SSM3K15ACT(TPL3). You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage SSM3K15ACT(TPL3).
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