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NTHD3101FT1G, ON Semiconductor

NTHD3101FT1G ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Schottky Diode (Isolated)
Manufacturer Standard Lead Time:
41 Weeks
Detailed Description:
P-Channel 20V 3.2A (Tj) 1.1W (Ta) Surface Mount ChipFET™
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SMD, Flat Lead
Gate Charge (Qg) (Max) @ Vgs:
7.4nC @ 4.5V
Rds On (Max) @ Id, Vgs:
80 mOhm @ 3.2A, 4.5V
FET Type:
P-Channel
Standard Package:
1
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
680pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
ChipFET™
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
3.2A (Tj)
Power Dissipation (Max):
1.1W (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
NTHD3101FT1GOSCT
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NTHD3101FT1G. The FET features of the product include schottky diode (isolated). It has typical 41 weeks of manufacturer standard lead time. It features p-channel 20v 3.2a (tj) 1.1w (ta) surface mount chipfet™. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 7.4nc @ 4.5v. It has a maximum Rds On and voltage of 80 mohm @ 3.2a, 4.5v. It carries FET type p-channel. It is available in the standard package of 1. The on semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 680pf @ 10v. The product is available in surface mount configuration. chipfet™ is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 3.2a (tj). The product carries maximum power dissipation 1.1w (ta). This product use mosfet (metal oxide) technology. Alternative Names include nthd3101ft1gosct.

pdf icon
NTHD3101F(Datasheets)
pdf icon
1298 (UK2011-EN PDF)(Catalog Page)

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