NVLUS4C12NTAG, ON Semiconductor
Product Information
Manufacturer Standard Lead Time:
4 Weeks
Detailed Description:
N-Channel 30V 6.8A (Ta) 630mW (Ta) Surface Mount 6-UDFN (2x2)
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 10V
Rds On (Max) @ Id, Vgs:
9 mOhm @ 9A, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1172pF @ 15V
Mounting Type:
Surface Mount
Supplier Device Package:
6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On):
3.3V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
6.8A (Ta)
Power Dissipation (Max):
630mW (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
NVLUS4C12NTAGOSCT
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This is manufactured by ON Semiconductor. The manufacturer part number is NVLUS4C12NTAG. It has typical 4 weeks of manufacturer standard lead time. It features n-channel 30v 6.8a (ta) 630mw (ta) surface mount 6-udfn (2x2). The typical Vgs (th) (max) of the product is 2.1v @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 18nc @ 10v. It has a maximum Rds On and voltage of 9 mohm @ 9a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1172pf @ 15v. The product is available in surface mount configuration. 6-udfn (2x2) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 6.8a (ta). The product carries maximum power dissipation 630mw (ta). This product use mosfet (metal oxide) technology. Alternative Names include nvlus4c12ntagosct.
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