This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK31V60W5,LVQ. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 600v 30.8a (ta) 240w (tc) surface mount 4-dfn-ep (8x8). The typical Vgs (th) (max) of the product is 4.5v @ 1.5ma. Furthermore, the product is active The product has 150°c (ta) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 105nc @ 10v. It has a maximum Rds On and voltage of 109 mohm @ 15.4a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 3000pf @ 300v. The product is available in surface mount configuration. The product dtmosiv, is a highly preferred choice for users. 4-dfn-ep (8x8) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 30.8a (ta). The product carries maximum power dissipation 240w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk31v60w5lvqct.
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK31V60W5,LVQ. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 600v 30.8a (ta) 240w (tc) surface mount 4-dfn-ep (8x8). The typical Vgs (th) (max) of the product is 4.5v @ 1.5ma. Furthermore, the product is active The product has 150°c (ta) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 105nc @ 10v. It has a maximum Rds On and voltage of 109 mohm @ 15.4a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 3000pf @ 300v. The product is available in surface mount configuration. The product dtmosiv, is a highly preferred choice for users. 4-dfn-ep (8x8) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 30.8a (ta). The product carries maximum power dissipation 240w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk31v60w5lvqct.
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