APT5010JLLU2, Microsemi Corporation
Product Information
Manufacturer Standard Lead Time:
32 Weeks
Detailed Description:
N-Channel 500V 41A (Tc) 378W (Tc) Chassis Mount SOT-227
Vgs(th) (Max) @ Id:
5V @ 2.5mA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-227-4, miniBLOC
Gate Charge (Qg) (Max) @ Vgs:
96nC @ 10V
Rds On (Max) @ Id, Vgs:
100 mOhm @ 23A, 10V
FET Type:
N-Channel
Standard Package:
100
Manufacturer:
Microsemi Corporation
Drain to Source Voltage (Vdss):
500V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
4360pF @ 25V
Mounting Type:
Chassis Mount
Supplier Device Package:
SOT-227
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
41A (Tc)
Power Dissipation (Max):
378W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT5010JLLU2. It has typical 32 weeks of manufacturer standard lead time. It features n-channel 500v 41a (tc) 378w (tc) chassis mount sot-227. The typical Vgs (th) (max) of the product is 5v @ 2.5ma. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 96nc @ 10v. It has a maximum Rds On and voltage of 100 mohm @ 23a, 10v. It carries FET type n-channel. It is available in the standard package of 100. The microsemi corporation's product offers user-desired applications. The product has a 500v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 4360pf @ 25v. The product is available in chassis mount configuration. sot-227 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 41a (tc). The product carries maximum power dissipation 378w (tc). This product use mosfet (metal oxide) technology.
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