TK35A08N1,S4X, Toshiba Semiconductor and Storage
Product Information
Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 80V 35A (Tc) 30W (Tc) Through Hole TO-220SIS
Vgs(th) (Max) @ Id:
4V @ 300µA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
25nC @ 10V
Rds On (Max) @ Id, Vgs:
12.2 mOhm @ 17.5A, 10V
FET Type:
N-Channel
Standard Package:
50
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
80V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1700pF @ 40V
Mounting Type:
Through Hole
Series:
U-MOSVIII-H
Supplier Device Package:
TO-220SIS
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
35A (Tc)
Power Dissipation (Max):
30W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
TK35A08N1,S4X(S
TK35A08N1,S4X-ND
TK35A08N1S4X
Checking for live stock
Alternative products
FAQs
Yes. We ship Toshiba Semiconductor and Storage TK35A08N1,S4X Internationally to many countries around the world.
You can order Toshiba Semiconductor and Storage brand products like Toshiba Semiconductor and Storage TK35A08N1,S4X directly through our website or by contacting our Customer Support Team. Or call us at +44 (0) 3303 800 157 or write and email to our support team at sales@enrgtech.co.uk.
Yes. You can also search TK35A08N1,S4X on website for other similar products.
We accept all major payment methods for all products including ET11026304. Please check your shopping cart at the time of order.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TK35A08N1,S4X. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TK35A08N1,S4X.
We use our internationally recognized delivery partners UPS/DHL. Collection of Toshiba Semiconductor and Storage TK35A08N1,S4X can also be arranged by the customer for international shipments by contacting our customer support team. Also you can search on website "Toshiba Semiconductor and Storage" products or by using our unique Enrgtech manufacturing part number ET11026304.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK35A08N1,S4X. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 80v 35a (tc) 30w (tc) through hole to-220sis. The typical Vgs (th) (max) of the product is 4v @ 300µa. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 25nc @ 10v. It has a maximum Rds On and voltage of 12.2 mohm @ 17.5a, 10v. It carries FET type n-channel. It is available in the standard package of 50. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 80v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1700pf @ 40v. The product is available in through hole configuration. The product u-mosviii-h, is a highly preferred choice for users. to-220sis is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 35a (tc). The product carries maximum power dissipation 30w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk35a08n1,s4x(s tk35a08n1,s4x-nd tk35a08n1s4x.
Reviews
Don’t hesitate to ask questions for better clarification.