TK16N60W,S1VF, Toshiba Semiconductor and Storage
Product Information
FET Feature:
Super Junction
Detailed Description:
N-Channel 600V 15.8A (Ta) 130W (Tc) Through Hole TO-247
Vgs(th) (Max) @ Id:
3.7V @ 790µA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
38nC @ 10V
Rds On (Max) @ Id, Vgs:
190 mOhm @ 7.9A, 10V
FET Type:
N-Channel
Standard Package:
30
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1350pF @ 300V
Mounting Type:
Through Hole
Series:
DTMOSIV
Supplier Device Package:
TO-247
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
15.8A (Ta)
Power Dissipation (Max):
130W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
TK16N60W,S1VF(S
TK16N60WS1VF
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK16N60W,S1VF. The FET features of the product include super junction. It features n-channel 600v 15.8a (ta) 130w (tc) through hole to-247. The typical Vgs (th) (max) of the product is 3.7v @ 790µa. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 38nc @ 10v. It has a maximum Rds On and voltage of 190 mohm @ 7.9a, 10v. It carries FET type n-channel. It is available in the standard package of 30. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1350pf @ 300v. The product is available in through hole configuration. The product dtmosiv, is a highly preferred choice for users. to-247 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 15.8a (ta). The product carries maximum power dissipation 130w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk16n60w,s1vf(s tk16n60ws1vf.
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