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TK62N60X,S1F, Toshiba Semiconductor and Storage

TK62N60X-S1F Toshiba Semiconductor and Storage TK62N60X,S1F
Toshiba Semiconductor and Storage

Product Information

FET Feature:
Super Junction
Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 600V 61.8A (Ta) 400W (Tc) Through Hole TO-247
Vgs(th) (Max) @ Id:
3.5V @ 3.1mA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
135nC @ 10V
Rds On (Max) @ Id, Vgs:
40 mOhm @ 21A, 10V
FET Type:
N-Channel
Standard Package:
30
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
6500pF @ 300V
Mounting Type:
Through Hole
Series:
DTMOSIV-H
Supplier Device Package:
TO-247
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
61.8A (Ta)
Power Dissipation (Max):
400W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
TK62N60X,S1F(S TK62N60XS1F
RoHs Compliant
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK62N60X,S1F. The FET features of the product include super junction. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 600v 61.8a (ta) 400w (tc) through hole to-247. The typical Vgs (th) (max) of the product is 3.5v @ 3.1ma. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 135nc @ 10v. It has a maximum Rds On and voltage of 40 mohm @ 21a, 10v. It carries FET type n-channel. It is available in the standard package of 30. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 6500pf @ 300v. The product is available in through hole configuration. The product dtmosiv-h, is a highly preferred choice for users. to-247 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 61.8a (ta). The product carries maximum power dissipation 400w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk62n60x,s1f(s tk62n60xs1f.

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You can order Toshiba Semiconductor and Storage brand products like Toshiba Semiconductor and Storage TK62N60X,S1F directly through our website or by contacting our Customer Support Team. Or call us at +44 (0) 3303 800 157 or write and email to our support team at sales@enrgtech.co.uk.
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You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TK62N60X,S1F. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TK62N60X,S1F.
We use our internationally recognized delivery partners UPS/DHL. Collection of Toshiba Semiconductor and Storage TK62N60X,S1F can also be arranged by the customer for international shipments by contacting our customer support team. Also you can search on website "Toshiba Semiconductor and Storage" products or by using our unique Enrgtech manufacturing part number ET11357357.