SSM3J334R,LF, Toshiba Semiconductor and Storage
Product Information
Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
P-Channel 30V 4A (Ta) 1W (Ta) Surface Mount SOT-23F
Vgs(th) (Max) @ Id:
2V @ 100µA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-23-3 Flat Leads
Gate Charge (Qg) (Max) @ Vgs:
5.9nC @ 10V
Rds On (Max) @ Id, Vgs:
71 mOhm @ 3A, 10V
FET Type:
P-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
280pF @ 15V
Mounting Type:
Surface Mount
Series:
U-MOSVI
Supplier Device Package:
SOT-23F
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Power Dissipation (Max):
1W (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
SSM3J334RLFCT
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3J334R,LF. It has typical 16 weeks of manufacturer standard lead time. It features p-channel 30v 4a (ta) 1w (ta) surface mount sot-23f. The typical Vgs (th) (max) of the product is 2v @ 100µa. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 5.9nc @ 10v. It has a maximum Rds On and voltage of 71 mohm @ 3a, 10v. It carries FET type p-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 280pf @ 15v. The product is available in surface mount configuration. The product u-mosvi, is a highly preferred choice for users. sot-23f is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 4a (ta). The product carries maximum power dissipation 1w (ta). This product use mosfet (metal oxide) technology. Alternative Names include ssm3j334rlfct.
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