SIHD6N62E-GE3, Vishay Siliconix
Product Information
Detailed Description:
N-Channel 6A (Tc) 78W (Tc) Surface Mount D-PAK (TO-252AA)
Vgs(th) (Max) @ Id:
4V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
34nC @ 10V
Rds On (Max) @ Id, Vgs:
900 mOhm @ 3A, 10V
FET Type:
N-Channel
Standard Package:
75
Manufacturer:
Vishay Siliconix
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
578pF @ 100V
Mounting Type:
Surface Mount
Supplier Device Package:
D-PAK (TO-252AA)
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Power Dissipation (Max):
78W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
SIHD6N62E-GE3CT
SIHD6N62E-GE3CT-ND
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This is manufactured by Vishay Siliconix. The manufacturer part number is SIHD6N62E-GE3. It features n-channel 6a (tc) 78w (tc) surface mount d-pak (to-252aa). The typical Vgs (th) (max) of the product is 4v @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 34nc @ 10v. It has a maximum Rds On and voltage of 900 mohm @ 3a, 10v. It carries FET type n-channel. It is available in the standard package of 75. The vishay siliconix's product offers user-desired applications. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 578pf @ 100v. The product is available in surface mount configuration. d-pak (to-252aa) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 6a (tc). The product carries maximum power dissipation 78w (tc). This product use mosfet (metal oxide) technology. Alternative Names include sihd6n62e-ge3ct sihd6n62e-ge3ct-nd.
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