SI3477DV-T1-GE3, Vishay Siliconix
Product Information
Detailed Description:
P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
Vgs(th) (Max) @ Id:
1V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Gate Charge (Qg) (Max) @ Vgs:
90nC @ 10V
Rds On (Max) @ Id, Vgs:
17.5 mOhm @ 9A, 4.5V
FET Type:
P-Channel
Standard Package:
1
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
12V
Vgs (Max):
±10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
2600pF @ 6V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
6-TSOP
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Power Dissipation (Max):
2W (Ta), 4.2W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
SI3477DV-T1-GE3CT
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FAQs
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI3477DV-T1-GE3. It features p-channel 12v 8a (tc) 2w (ta), 4.2w (tc) surface mount 6-tsop. The typical Vgs (th) (max) of the product is 1v @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 90nc @ 10v. It has a maximum Rds On and voltage of 17.5 mohm @ 9a, 4.5v. It carries FET type p-channel. It is available in the standard package of 1. The vishay siliconix's product offers user-desired applications. The product has a 12v drain to source voltage. The maximum Vgs rate is ±10v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 2600pf @ 6v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 6-tsop is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 8a (tc). The product carries maximum power dissipation 2w (ta), 4.2w (tc). This product use mosfet (metal oxide) technology. Alternative Names include si3477dv-t1-ge3ct.
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