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SISS28DN-T1-GE3, Vishay Siliconix

SISS28DN-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

Manufacturer Standard Lead Time:
22 Weeks
Detailed Description:
N-Channel 25V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
Vgs(th) (Max) @ Id:
2V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs:
35nC @ 4.5V
Rds On (Max) @ Id, Vgs:
1.52 mOhm @ 15A, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
25V
Vgs (Max):
+20V, -16V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
3640pF @ 10V
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
PowerPAK® 1212-8S (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Power Dissipation (Max):
57W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
SISS28DN-T1-GE3CT
RoHs Compliant
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SISS28DN-T1-GE3. It has typical 22 weeks of manufacturer standard lead time. It features n-channel 25v 60a (tc) 57w (tc) surface mount powerpak® 1212-8s (3.3x3.3). The typical Vgs (th) (max) of the product is 2v @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 35nc @ 4.5v. It has a maximum Rds On and voltage of 1.52 mohm @ 15a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The vishay siliconix's product offers user-desired applications. The product has a 25v drain to source voltage. The maximum Vgs rate is +20v, -16v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 3640pf @ 10v. The product is available in surface mount configuration. The product trenchfet® gen iv, is a highly preferred choice for users. powerpak® 1212-8s (3.3x3.3) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 60a (tc). The product carries maximum power dissipation 57w (tc). This product use mosfet (metal oxide) technology. Alternative Names include siss28dn-t1-ge3ct.

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SISS28DN(Datasheets)

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FAQs

Yes. We ship Vishay Siliconix SISS28DN-T1-GE3 Internationally to many countries around the world.
You can order Vishay Siliconix brand products like Vishay Siliconix SISS28DN-T1-GE3 directly through our website or by contacting our Customer Support Team. Or call us at +44 (0) 3303 800 157 or write and email to our support team at sales@enrgtech.co.uk.
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We accept all major payment methods for all products including ET11648705. Please check your shopping cart at the time of order.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SISS28DN-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SISS28DN-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of Vishay Siliconix SISS28DN-T1-GE3 can also be arranged by the customer for international shipments by contacting our customer support team. Also you can search on website "Vishay Siliconix" products or by using our unique Enrgtech manufacturing part number ET11648705.