SIHF6N65E-GE3, Vishay Siliconix
Product Information
Detailed Description:
N-Channel 650V 7A (Tc) 31W (Tc) Through Hole TO-220 Full Pack
Vgs(th) (Max) @ Id:
4V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
48nC @ 10V
Rds On (Max) @ Id, Vgs:
600 mOhm @ 3A, 10V
FET Type:
N-Channel
Standard Package:
1,000
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
820pF @ 100V
Mounting Type:
Through Hole
Supplier Device Package:
TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
7A (Tc)
Power Dissipation (Max):
31W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
SIHF6N65E-GE3CT
SIHF6N65E-GE3CT-ND
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This is manufactured by Vishay Siliconix. The manufacturer part number is SIHF6N65E-GE3. It features n-channel 650v 7a (tc) 31w (tc) through hole to-220 full pack. The typical Vgs (th) (max) of the product is 4v @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 48nc @ 10v. It has a maximum Rds On and voltage of 600 mohm @ 3a, 10v. It carries FET type n-channel. It is available in the standard package of 1,000. The vishay siliconix's product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 820pf @ 100v. The product is available in through hole configuration. to-220 full pack is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 7a (tc). The product carries maximum power dissipation 31w (tc). This product use mosfet (metal oxide) technology. Alternative Names include sihf6n65e-ge3ct sihf6n65e-ge3ct-nd.
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