APT40SM120S, Microsemi Corporation
Product Information
Detailed Description:
N-Channel 1200V 41A (Tc) 273W (Tc) Surface Mount D3Pak
Vgs(th) (Max) @ Id:
3V @ 1mA (Typ)
Part Status:
Obsolete
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Gate Charge (Qg) (Max) @ Vgs:
130nC @ 20V
Rds On (Max) @ Id, Vgs:
100 mOhm @ 20A, 20V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Microsemi Corporation
Drain to Source Voltage (Vdss):
1200V
Vgs (Max):
+25V, -10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
2560pF @ 1000V
Mounting Type:
Surface Mount
Supplier Device Package:
D3Pak
Drive Voltage (Max Rds On, Min Rds On):
20V
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
41A (Tc)
Power Dissipation (Max):
273W (Tc)
Technology:
SiCFET (Silicon Carbide)
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT40SM120S. It features n-channel 1200v 41a (tc) 273w (tc) surface mount d3pak. The typical Vgs (th) (max) of the product is 3v @ 1ma (typ). Furthermore, the product is obsolete The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 130nc @ 20v. It has a maximum Rds On and voltage of 100 mohm @ 20a, 20v. It carries FET type n-channel. It is available in the standard package of 1. The microsemi corporation's product offers user-desired applications. The product has a 1200v drain to source voltage. The maximum Vgs rate is +25v, -10v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 2560pf @ 1000v. The product is available in surface mount configuration. d3pak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 41a (tc). The product carries maximum power dissipation 273w (tc). This product use sicfet (silicon carbide) technology.
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