SIR872DP-T1-GE3, Vishay Siliconix
Product Information
Detailed Description:
N-Channel 150V 53.7A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
64nC @ 10V
Rds On (Max) @ Id, Vgs:
18 mOhm @ 20A, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
150V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
2130pF @ 75V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
53.7A (Tc)
Power Dissipation (Max):
6.25W (Ta), 104W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
SIR872DP-T1-GE3CT
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This is manufactured by Vishay Siliconix. The manufacturer part number is SIR872DP-T1-GE3. It features n-channel 150v 53.7a (tc) 6.25w (ta), 104w (tc) surface mount. The typical Vgs (th) (max) of the product is 3.5v @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 64nc @ 10v. It has a maximum Rds On and voltage of 18 mohm @ 20a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The vishay siliconix's product offers user-desired applications. The product has a 150v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 2130pf @ 75v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 53.7a (tc). The product carries maximum power dissipation 6.25w (ta), 104w (tc). This product use mosfet (metal oxide) technology. Alternative Names include sir872dp-t1-ge3ct.
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