APT28M120B2, Microsemi Corporation
Product Information
Manufacturer Standard Lead Time:
17 Weeks
Detailed Description:
N-Channel 1200V 29A (Tc) 1135W (Tc) Through Hole T-MAX™ [B2]
Vgs(th) (Max) @ Id:
5V @ 2.5mA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3 Variant
Gate Charge (Qg) (Max) @ Vgs:
300nC @ 10V
Rds On (Max) @ Id, Vgs:
560 mOhm @ 14A, 10V
FET Type:
N-Channel
Standard Package:
30
Manufacturer:
Microsemi Corporation
Drain to Source Voltage (Vdss):
1200V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
9670pF @ 25V
Mounting Type:
Through Hole
Series:
POWER MOS 8™
Supplier Device Package:
T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
29A (Tc)
Power Dissipation (Max):
1135W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
APT28M120B2MI
APT28M120B2MI-ND
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT28M120B2. It has typical 17 weeks of manufacturer standard lead time. It features n-channel 1200v 29a (tc) 1135w (tc) through hole t-max™ [b2]. The typical Vgs (th) (max) of the product is 5v @ 2.5ma. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 300nc @ 10v. It has a maximum Rds On and voltage of 560 mohm @ 14a, 10v. It carries FET type n-channel. It is available in the standard package of 30. The microsemi corporation's product offers user-desired applications. The product has a 1200v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 9670pf @ 25v. The product is available in through hole configuration. The product power mos 8™, is a highly preferred choice for users. t-max™ [b2] is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 29a (tc). The product carries maximum power dissipation 1135w (tc). This product use mosfet (metal oxide) technology. Alternative Names include apt28m120b2mi apt28m120b2mi-nd.
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