Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 650V 13.7A (Ta) 130W (Tc) Through Hole I2PAK
Vgs(th) (Max) @ Id:
3.5V @ 690µA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
35nC @ 10V
Rds On (Max) @ Id, Vgs:
250 mOhm @ 6.9A, 10V
FET Type:
N-Channel
Standard Package:
50
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1300pF @ 300V
Mounting Type:
Through Hole
Series:
DTMOSIV
Supplier Device Package:
I2PAK
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
13.7A (Ta)
Power Dissipation (Max):
130W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
TK14C65W,S1Q(S
TK14C65W,S1Q(S2
TK14C65W,S1Q-ND
TK14C65WS1Q
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK14C65W,S1Q. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 650v 13.7a (ta) 130w (tc) through hole i2pak. The typical Vgs (th) (max) of the product is 3.5v @ 690µa. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 35nc @ 10v. It has a maximum Rds On and voltage of 250 mohm @ 6.9a, 10v. It carries FET type n-channel. It is available in the standard package of 50. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1300pf @ 300v. The product is available in through hole configuration. The product dtmosiv, is a highly preferred choice for users. i2pak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 13.7a (ta). The product carries maximum power dissipation 130w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk14c65w,s1q(s tk14c65w,s1q(s2 tk14c65w,s1q-nd tk14c65ws1q.
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