NVD5863NLT4G, ON Semiconductor
Product Information
Manufacturer Standard Lead Time:
27 Weeks
Vgs(th) (Max) @ Id:
3V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
70nC @ 10V
Rds On (Max) @ Id, Vgs:
7.1 mOhm @ 41A, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
3850pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
14.9A (Ta), 82A (Tc)
Power Dissipation (Max):
3.1W (Ta), 96W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by ON Semiconductor. The manufacturer part number is NVD5863NLT4G. It has typical 27 weeks of manufacturer standard lead time. The typical Vgs (th) (max) of the product is 3v @ 250µa. Furthermore, the product is active The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 70nc @ 10v. It has a maximum Rds On and voltage of 7.1 mohm @ 41a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 3850pf @ 25v. The product is available in surface mount configuration. dpak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 14.9a (ta), 82a (tc). The product carries maximum power dissipation 3.1w (ta), 96w (tc). This product use mosfet (metal oxide) technology.
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