SIHW30N60E-GE3, Vishay Siliconix
Product Information
Detailed Description:
N-Channel 600V 29A (Tc) 250W (Tc) Through Hole TO-247AD
Vgs(th) (Max) @ Id:
4V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-3P-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
130nC @ 10V
Rds On (Max) @ Id, Vgs:
125 mOhm @ 15A, 10V
FET Type:
N-Channel
Standard Package:
500
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
2600pF @ 100V
Mounting Type:
Through Hole
Supplier Device Package:
TO-247AD
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
29A (Tc)
Power Dissipation (Max):
250W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
SIHW30N60E-GE3CT
SIHW30N60E-GE3CT-ND
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This is manufactured by Vishay Siliconix. The manufacturer part number is SIHW30N60E-GE3. It features n-channel 600v 29a (tc) 250w (tc) through hole to-247ad. The typical Vgs (th) (max) of the product is 4v @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 130nc @ 10v. It has a maximum Rds On and voltage of 125 mohm @ 15a, 10v. It carries FET type n-channel. It is available in the standard package of 500. The vishay siliconix's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 2600pf @ 100v. The product is available in through hole configuration. to-247ad is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 29a (tc). The product carries maximum power dissipation 250w (tc). This product use mosfet (metal oxide) technology. Alternative Names include sihw30n60e-ge3ct sihw30n60e-ge3ct-nd.
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