1HN04CH-TL-W, ON Semiconductor
Product Information
Manufacturer Standard Lead Time:
5 Weeks
Detailed Description:
N-Channel 100V 270mA (Ta) Surface Mount 3-CPH
Vgs(th) (Max) @ Id:
2.6V @ 100µA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
0.9nC @ 10V
Rds On (Max) @ Id, Vgs:
8 Ohm @ 140mA, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
15pF @ 20V
Mounting Type:
Surface Mount
Supplier Device Package:
3-CPH
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
270mA (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
1HN04CH-TL-WOSCT
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This is manufactured by ON Semiconductor. The manufacturer part number is 1HN04CH-TL-W. It has typical 5 weeks of manufacturer standard lead time. It features n-channel 100v 270ma (ta) surface mount 3-cph. The typical Vgs (th) (max) of the product is 2.6v @ 100µa. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 0.9nc @ 10v. It has a maximum Rds On and voltage of 8 ohm @ 140ma, 10v. It carries FET type n-channel. It is available in the standard package of 1. The on semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 15pf @ 20v. The product is available in surface mount configuration. 3-cph is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 270ma (ta). This product use mosfet (metal oxide) technology. Alternative Names include 1hn04ch-tl-wosct.
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