NTA4151PT1H, ON Semiconductor
Product Information
Manufacturer Standard Lead Time:
4 Weeks
Detailed Description:
P-Channel 20V 760mA (Tj) 301mW (Tj) Surface Mount SC-75, SOT-416
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Part Status:
Active
Package / Case:
SC-75, SOT-416
Gate Charge (Qg) (Max) @ Vgs:
2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs:
360 mOhm @ 350mA, 4.5V
FET Type:
P-Channel
Standard Package:
1
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±6V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
156pF @ 5V
Mounting Type:
Surface Mount
Supplier Device Package:
SC-75, SOT-416
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
760mA (Tj)
Power Dissipation (Max):
301mW (Tj)
Technology:
MOSFET (Metal Oxide)
Other Names:
NTA4151PT1HOSCT
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This is manufactured by ON Semiconductor. The manufacturer part number is NTA4151PT1H. It has typical 4 weeks of manufacturer standard lead time. It features p-channel 20v 760ma (tj) 301mw (tj) surface mount sc-75, sot-416. The typical Vgs (th) (max) of the product is 1.2v @ 250µa. Furthermore, the product is active Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 2.1nc @ 4.5v. It has a maximum Rds On and voltage of 360 mohm @ 350ma, 4.5v. It carries FET type p-channel. It is available in the standard package of 1. The on semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±6v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 156pf @ 5v. The product is available in surface mount configuration. sc-75, sot-416 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 760ma (tj). The product carries maximum power dissipation 301mw (tj). This product use mosfet (metal oxide) technology. Alternative Names include nta4151pt1hosct.
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