NTD5865NLT4G, ON Semiconductor
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
29 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
52 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2V
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Maximum Drain Source Resistance:
19 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
40 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
19 Weeks
Base Part Number:
NTD58
Detailed Description:
N-Channel 60V 46A (Tc) 71W (Tc) Surface Mount DPAK
Input Capacitance (Ciss) (Max) @ Vds:
1400pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2V @ 250µA
Part Status:
Active
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
29nC @ 10V
Rds On (Max) @ Id, Vgs:
16mOhm @ 20A, 10V
Supplier Device Package:
DPAK
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max):
71W (Tc)
Current - Continuous Drain (Id) @ 25°C:
46A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTD5865NLT4G. The product is available in surface mount configuration. In addition, the height is 2.38mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It has typical 19 weeks of manufacturer standard lead time. Base Part Number: ntd58. It features n-channel 60v 46a (tc) 71w (tc) surface mount dpak. The product's input capacitance at maximum includes 1400pf @ 25v. The typical Vgs (th) (max) of the product is 2v @ 250µa. Furthermore, the product is active The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 29nc @ 10v. It has a maximum Rds On and voltage of 16mohm @ 20a, 10v. dpak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in [Package/ Case]. The product carries maximum power dissipation 71w (tc). The continuous current drain at 25°C is 46a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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