MGSF1N03LT1G, ON Semiconductor
Product Information
Manufacturer Standard Lead Time:
24 Weeks
Rds On (Max) @ Id, Vgs:
100mOhm @ 1.2A, 10V
Detailed Description:
N-Channel 30V 1.6A (Ta) 420mW (Ta) Surface Mount SOT-23-3 (TO-236)
Input Capacitance (Ciss) (Max) @ Vds:
140pF @ 5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.4V @ 250µA
Part Status:
Active
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Supplier Device Package:
SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
420mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
1.6A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MGSF1N03LT1G. It has typical 24 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 100mohm @ 1.2a, 10v. It features n-channel 30v 1.6a (ta) 420mw (ta) surface mount sot-23-3 (to-236). The product's input capacitance at maximum includes 140pf @ 5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.4v @ 250µa. Furthermore, the product is active The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. sot-23-3 (to-236) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in [Package/ Case]. The product carries maximum power dissipation 420mw (ta). The continuous current drain at 25°C is 1.6a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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