SI3483CDV-T1-GE3, Vishay Siliconix
Product Information
Manufacturer Standard Lead Time:
14 Weeks
Detailed Description:
P-Channel 30V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
Vgs(th) (Max) @ Id:
3V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Base Part Number:
SI3483
Gate Charge (Qg) (Max) @ Vgs:
33nC @ 10V
Rds On (Max) @ Id, Vgs:
34mOhm @ 6.1A, 10V
FET Type:
P-Channel
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1000pF @ 15V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
6-TSOP
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Power Dissipation (Max):
2W (Ta), 4.2W (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI3483CDV-T1-GE3. It has typical 14 weeks of manufacturer standard lead time. It features p-channel 30v 8a (tc) 2w (ta), 4.2w (tc) surface mount 6-tsop. The typical Vgs (th) (max) of the product is 3v @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. Base Part Number: si3483. The maximum gate charge and given voltages include 33nc @ 10v. It has a maximum Rds On and voltage of 34mohm @ 6.1a, 10v. It carries FET type p-channel. The vishay siliconix's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1000pf @ 15v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 6-tsop is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 8a (tc). The product carries maximum power dissipation 2w (ta), 4.2w (tc). This product use mosfet (metal oxide) technology.
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