APT10SCD65KCT, Microsemi Corporation
Product Information
Reverse Recovery Time (trr):
0ns
Detailed Description:
Diode Array 1 Pair Common Cathode Silicon Carbide Schottky 650V 17A Through Hole TO-220-3
Current - Reverse Leakage @ Vr:
200µA @ 650V
Operating Temperature - Junction:
-55°C ~ 150°C
Mounting Type:
Through Hole
Part Status:
Obsolete
Diode Configuration:
1 Pair Common Cathode
Standard Package:
50
Voltage - Forward (Vf) (Max) @ If:
1.8V @ 10A
Supplier Device Package:
TO-220
Packaging:
Bulk
Current - Average Rectified (Io) (per Diode):
17A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
TO-220-3
Voltage - DC Reverse (Vr) (Max):
650V
Diode Type:
Silicon Carbide Schottky
Speed:
No Recovery Time > 500mA (Io)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT10SCD65KCT. It has a trr (reverse recovery time) of 0ns. It features diode array 1 pair common cathode silicon carbide schottky 650v 17a through hole to-220-3. 200µa @ 650v is the reverse leakage value of a bespoke product. The product operate at temperatures ranging from -55°c ~ 150°c. The product is available in through hole configuration. Furthermore, the product is obsolete The diode features a 1 pair common cathode configuration. It is available in the standard package of 50. The product has a maximum forward voltage of 1.8v @ 10a. to-220 is the supplier device package value. In addition, bulk is the available packaging type of the product. The average rectified current at per diode is 17a. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. While it has maximum reverse voltage of 650v. It is designed with a silicon carbide schottky diode. It has a robust speed of no recovery time > 500ma (io). The microsemi corporation's product offers user-desired applications.
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