CUS10S30,H3F, Toshiba Semiconductor and Storage

Enrgtech Part No: ET10859782
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Manufacturer Part No:
CUS10S30,H3F
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Manufacturer: Toshiba Semiconductor and Storage

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Product Information

Manufacturer Standard Lead Time:

12 Weeks

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Detailed Description:

Diode Schottky 30V 1A Surface Mount USC

Capacitance @ Vr, F:

135pF @ 0V, 1MHz

Current - Reverse Leakage @ Vr:

500µA @ 30V

Operating Temperature - Junction:

125°C (Max)

Mounting Type:

Surface Mount

Part Status:

Active

Voltage - DC Reverse (Vr) (Max):

30V

Standard Package:

Voltage - Forward (Vf) (Max) @ If:

230mV @ 100mA

Supplier Device Package:

USC

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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is CUS10S30,H3F. It has typical 12 weeks of manufacturer standard lead time. Its typical moisture sensitivity level is 1 (unlimited). It features diode schottky 30v 1a surface mount usc. Moreover, the product has a 135pf @ 0v, 1mhz capacitance. 500µa @ 30v is the reverse leakage value of a bespoke product. The product operate at temperatures ranging from 125°c (max). The product is available in surface mount configuration. Furthermore, the product is active While it has maximum reverse voltage of 30v. It is available in the standard package of 1. The product has a maximum forward voltage of 230mv @ 100ma. usc is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. It features a 1a of average rectified current. Moreover, the product comes in [Package/ Case]. It is designed with a schottky diode. It has a robust speed of fast recovery = 200ma (io). Alternative Names include cus10s30h3fct. The toshiba semiconductor and storage's product offers user-desired applications.

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