TRS10E65C,S1Q, Toshiba Semiconductor and Storage

Enrgtech Part No: ET11016221
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Manufacturer Part No:
TRS10E65C,S1Q
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Manufacturer: Toshiba Semiconductor and Storage

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Product Information

Manufacturer Standard Lead Time:

16 Weeks

Reverse Recovery Time (trr):

0ns

Detailed Description:

Diode Silicon Carbide Schottky 650V 10A (DC) Through Hole TO-220-2L

Current - Reverse Leakage @ Vr:

90µA @ 650V

Operating Temperature - Junction:

175°C (Max)

Mounting Type:

Through Hole

Part Status:

Active

Voltage - DC Reverse (Vr) (Max):

650V

Standard Package:

Voltage - Forward (Vf) (Max) @ If:

1.7V @ 10A

Supplier Device Package:

TO-220-2L

Packaging:

Tube

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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TRS10E65C,S1Q. It has typical 16 weeks of manufacturer standard lead time. It has a trr (reverse recovery time) of 0ns. It features diode silicon carbide schottky 650v 10a (dc) through hole to-220-2l. 90µa @ 650v is the reverse leakage value of a bespoke product. The product operate at temperatures ranging from 175°c (max). The product is available in through hole configuration. Furthermore, the product is active While it has maximum reverse voltage of 650v. It is available in the standard package of 50. The product has a maximum forward voltage of 1.7v @ 10a. to-220-2l is the supplier device package value. In addition, tube is the available packaging type of the product. Its typical moisture sensitivity level is 1 (unlimited). It features a 10a (dc) of average rectified current. Moreover, the product comes in [Package/ Case]. It is designed with a silicon carbide schottky diode. It has a robust speed of no recovery time > 500ma (io). Alternative Names include trs10e65c,s1q(s trs10e65c,s1q-nd trs10e65cs1q. The toshiba semiconductor and storage's product offers user-desired applications.

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