1N6628US, Microsemi Corporation
Product Information
Reverse Recovery Time (trr):
30ns
Detailed Description:
Diode Standard 660V 1.75A Surface Mount A-MELF
Capacitance @ Vr, F:
40pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr:
2µA @ 660V
Operating Temperature - Junction:
-65°C ~ 150°C
Mounting Type:
Surface Mount
Part Status:
Active
Voltage - DC Reverse (Vr) (Max):
660V
Standard Package:
1
Voltage - Forward (Vf) (Max) @ If:
1.35V @ 2A
Supplier Device Package:
A-MELF
Packaging:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Average Rectified (Io):
1.75A
Package / Case:
SQ-MELF, A
Diode Type:
Standard
Speed:
Fast Recovery = 200mA (Io)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is 1N6628US. It has a trr (reverse recovery time) of 30ns. It features diode standard 660v 1.75a surface mount a-melf. Moreover, the product has a 40pf @ 10v, 1mhz capacitance. 2µa @ 660v is the reverse leakage value of a bespoke product. The product operate at temperatures ranging from -65°c ~ 150°c. The product is available in surface mount configuration. Furthermore, the product is active While it has maximum reverse voltage of 660v. It is available in the standard package of 1. The product has a maximum forward voltage of 1.35v @ 2a. a-melf is the supplier device package value. In addition, bulk is the available packaging type of the product. Its typical moisture sensitivity level is 1 (unlimited). It features a 1.75a of average rectified current. Moreover, the product comes in [Package/ Case]. It is designed with a standard diode. It has a robust speed of fast recovery = 200ma (io). The microsemi corporation's product offers user-desired applications.
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