APT10SCD65K, Microsemi Corporation
Product Information
Reverse Recovery Time (trr):
0ns
Detailed Description:
Diode Silicon Carbide Schottky 650V 17A Through Hole TO-220 [K]
Capacitance @ Vr, F:
300pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr:
200µA @ 650V
Operating Temperature - Junction:
-55°C ~ 150°C
Mounting Type:
Through Hole
Part Status:
Obsolete
Voltage - DC Reverse (Vr) (Max):
650V
Standard Package:
50
Voltage - Forward (Vf) (Max) @ If:
1.8V @ 10A
Supplier Device Package:
TO-220 [K]
Packaging:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Average Rectified (Io):
17A
Package / Case:
TO-220-2
Diode Type:
Silicon Carbide Schottky
Speed:
No Recovery Time > 500mA (Io)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT10SCD65K. It has a trr (reverse recovery time) of 0ns. It features diode silicon carbide schottky 650v 17a through hole to-220 [k]. Moreover, the product has a 300pf @ 1v, 1mhz capacitance. 200µa @ 650v is the reverse leakage value of a bespoke product. The product operate at temperatures ranging from -55°c ~ 150°c. The product is available in through hole configuration. Furthermore, the product is obsolete While it has maximum reverse voltage of 650v. It is available in the standard package of 50. The product has a maximum forward voltage of 1.8v @ 10a. to-220 [k] is the supplier device package value. In addition, bulk is the available packaging type of the product. Its typical moisture sensitivity level is 1 (unlimited). It features a 17a of average rectified current. Moreover, the product comes in [Package/ Case]. It is designed with a silicon carbide schottky diode. It has a robust speed of no recovery time > 500ma (io). The microsemi corporation's product offers user-desired applications.
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